RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs

Designed primarily for pulsed wideband applications with frequencies up to
500 MHz.
Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
• Typical Pulsed Performance at 450 MHz: VDD = 50 Volts,
IDQ = 150 mA,
Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain — 20 dB
Drain Efficiency — 64%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak
Power


LDMOS MRF6VP3450H

LDMOS BLF861

LDMOS MRF6VP11KH

MOSFET MRF6VP41KH

MOSFET BLF245

MOSFET BLF278


HOTLINE SERVICE

0878 8878 1100

HARGA SPESIAL

dari berbagai brand

PENGIRIMAN

ke seluruh daerah

GARANSI

selama 1 tahun

Our Products