Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 50 volt analog or digital television transmitter equipment.


Specification:

-RF Power Field Effect Transistors

-N-Channel Enhancement-Mode Lateral MOSFETs

-Designed for broadband commercial and industrial applications with

-frequencies from 470 to 860 MHz. The high gain and broadband performance

-of these devices make them ideal for large- signal, common-source amplifier

-applications in 50 volt analog or digital television transmitter equipment.

• Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA,

-Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM

-Power Gain . 22.5 dB

-Drain Efficiency . 28%

-ACPR @ 4 MHz Offset . -62 dBc @ 4 kHz Bandwidth

• Typical Broadband Two-Tone Performance: VDD = 50 Volts, IDQ = 1400 mA,

-Pout = 450 Watts PEP, f = 470 -860 MHz

-Power Gain . 22 dB

-Drain Efficiency . 44%

-IM3 . -29 dBc

• Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz:

-450 Watts CW

-90 Watts Avg. (DVB-T OFDM Signal, 10 dB PAR, 7.61 MHz Channel

Bandwidth)

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Input Matched for Ease of Use

• Qualified Up to a Maximum of 50 VDD Operation

• Integrated ESD Protection

• Excellent Thermal Stability

• Designed for Push- Pull Operation

• Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

R5 Suffix = 50 Units per 56 mm, 13 inch Reel.


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